Large Area Ultra Low Noise Photodetectors

The Large Active Area High Speed Detectors can be fully depleted to achieve the lowest possible junction capacitance for fast response times. They may be operated at a higher reverse voltage, up to the maximum allowable value, for achieving even faster response times in nano seconds. The high reverse bias at this point, increases the effective electric field across the junction, hence increasing the charge collection time in the depleted region. Note that this is achieved without the sacrifice for the high responsivity as well as active area.

The Large Active Area Radiation Detectors can also be fully depleted for applications measuring high energy X-rays, X-rays as well as high energy particles such as electrons, alpha rays and heavy ions. These types of radiation can be measured with two different methods. Indirect and direct.

Indirect High Energy Radiation Measurement:
In this method, the detectors are coupled to a scintillator crystal for converting high energy radiation into a detectable visible wavelength. The devices are mounted on a ceramic and covered with a clear layer of an epoxy resin for excellent optical coupling to the scintillator. This method is widely used in detection of high energy gamma rays and electrons. This is where the X-UV devices fail to measure energies higher than 17.6 keV. The type and size of scintillator can be selected based on radiation type and magnitude.

Direct High Energy Radiation Measurement:
Both PIN-RD100 and PIN-RD100A can also be used without any epoxy resin or glass window for direct measurement of high energy radiation such as alpha rays and heavy ions. The radiation exhibits loss of energy along a linear line deep into the silicon after incident on the active area.

The amount of loss and the penetration depth is determined by the type and magnitude of the radiation. In order to measure completely the amount of radiation, the depletion layer should be deep enough to cover the whole track from the incident point to the stop point. This requires a high bias application to fully deplete the detector. In spite of the large active area as well as high bias voltage applications, the devices exhibit super low dark currents, low capacitances and low series resistances.

In addition to their use in high energy particle detection, the PIN-RD100 and PIN-RD100A are also excellent choises for detection in the range between 350 to 1100 nm in applications where large active area and high speed is desired.

These detectors can be coupled to a charge sensitive preamplifier or low noise op-amp as shown in the datasheet

Standard Low Noise Large Area Opto Detectors
X-Ray Detectors
Filter
Custom solution
Hybrid
Standard Opto Diodes
FAQ
Application notes
Photodiode Glossary of Terms
Sales